x-band internally matched fet features ? high output power: p1db=44dbm(typ.) ? high gain: g1db=7.0db(typ.) ? high pae: add=30%(typ.) ? broad band: 9.5 10.5ghz ? impedance matched zin/zout = 50 ? hermetically sealed package absolute maximum ratings (case temperature tc=25 c) electrical character istics (case temperature tc=25 c) case style: ik edition 1.3 oct. 2004 1 FLM0910-25F note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ) item symbol rating unit drain-source voltage gate-source voltage total power dissipation storage temperature v ds v gs p t t stg 15 -5 93.7 -65 to +175 v v w channel temperature t ch 175 power gain at 1db g.c.p. limit item symbol test conditions unit drain current output power at 1db g.c.p. gain flatness i dss p 1db g a v db dbm min. typ. max. drain current i dsr s v a - 10 - -0.5 -1.5 -3.0 -5.0 - - 43.0 44.0 - 6.0 7.0 - - 6.5 7.2 v ds =10v f=9.5 - 10.5 ghz i ds =0.6idss zs=z l =50 power-added efficiency add % - 30 - --1.2 - 10.8 16.2 v ds =5v, v gs =0v transconductance g m v ds =5v, i ds =6.48a pinch-off voltage v p v ds =5v, i ds =600ma gate-source breakdown voltage v gso i gs =-600ua g 1db db thermal resistance r th channel to case - 1.4 1.6 /w channel temperature rise t ch 10v x idsr x rth - - 100 description the FLM0910-25F is a power gaas fet that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. recommended operating condi tion(case temperature tc=25 c) item symbol condition unit dc input voltage forward gate current v ds i gf 10 64 v ma limit r g =25 reverse gate current i gr r g =25 -11.2 ma g.c.p.:gain compression point esd class 2000v
FLM0910-25F x-band internally matched fet 2 output power & power added efficiency vs. input power output power vs. frequency vds=10v, ids(dc)=0.60idss, f=10.0ghz 32 34 36 38 40 42 44 46 24 26 28 30 32 34 36 38 40 42 input power (dbm) output power (dbm) 0 10 20 30 40 50 60 70 power added efficiency (%) vds=10v, ids(dc)=0.60idss 32 34 36 38 40 42 44 46 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6 10.8 frequency (ghz) output power (dbm) pin=26dbm pin=30dbm pin=34dbm pin=37dbm pin=39dbm p1db 0 20 40 60 80 100 0 50 100 150 200 case temperature [ c] total power dissipation [w] power derating curve o
FLM0910-25F x-band internally matched fet 3 s-parameter vds=10v , ids=0.6idss s11 s22 9.5g h z 10 9. 5g h z 25 10.5 10 10.5 s12 s21 0.2 3 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 9.5ghz 2 10 10.5 10.5 10 9.5ghz freq [g h z ] m ag ang m ag ang m ag ang m ag ang 90. 71 -88. 02 2. 15 35.09 0. 05 15. 25 0. 26 -77. 71 9. 10. 65 -103. 53 2. 29 18.28 0. 06 -1. 55 0. 22 -107.05 9. 20. 59 -120. 18 2. 40 1. 32 0. 06 -17.77 0. 21 -138.65 9. 30. 53 -138. 00 2. 47 -15. 34 0. 06 -34.01 0. 22 -167.56 9. 40. 47 -156. 97 2. 51 -31. 59 0. 06 -49.64 0. 24 168. 82 9. 50. 42 -177. 22 2. 53 -47. 33 0. 06 -64.58 0. 26 149. 54 9. 60. 39 161. 48 2. 56 -62. 74 0. 06 -79.62 0. 29 133. 93 9. 70. 37 138. 88 2. 59 -78. 13 0. 06 -94.61 0. 30 120. 00 9. 80. 37 116. 07 2. 62 -93. 65 0. 06 -109. 43 0. 31 107. 27 9. 90. 38 93. 62 2. 63 -109. 43 0. 06 -124. 61 0. 32 95. 51 10 0. 40 72. 47 2. 64 -125. 14 0. 06 -140. 33 0. 32 84. 23 10. 10. 41 52. 59 2. 62 -140. 95 0. 06 -155. 72 0. 32 73. 93 10. 20. 43 33. 84 2. 60 -156. 81 0. 06 -172. 24 0. 32 63. 61 10. 30. 44 16. 24 2. 57 -172. 15 0. 06 171.03 0. 32 54. 33 10. 40. 44 -0. 56 2. 53 172. 43 0. 06 154.60 0. 33 44. 93 10. 50. 44 -17. 05 2. 50 156. 88 0. 06 137.92 0. 33 35. 26 10. 60. 43 -33. 47 2. 47 141. 58 0. 06 120.72 0. 33 25. 29 10. 70. 42 -50. 45 2. 44 126. 23 0. 06 103.61 0. 33 15. 68 10. 80. 40 -68. 63 2. 43 110. 45 0. 07 85. 80 0. 32 6. 13 10. 90. 37 -89. 03 2. 43 94.22 0. 07 68. 12 0. 30 -2. 58 11 0. 34 -113. 11 2. 42 77.32 0. 08 50. 38 0. 27 -9. 87 s11 s21 s12 s22
x-band internally matched fet 4 FLM0910-25F package out line unit : mm pin assigment 1 : gate 2 : source 3 : drain 4 : source case style : ik
FLM0910-25F x-band internally matched fet 5 for further information please contact : eudyna devices usa inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.us.eudyna.com eudyna devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 caution eudyna devices inc. products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. eudyna devices asia pte. ltd. hong kong branch rm.1101,ocean centre, 5 canton road tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 eudyna devices inc. sales division 1, kanai-cho, sakae-ku yokohama, 244-0845, japan tel +81-45-853-8156 fax +81-45-853-8170 eudyna devices inc. reserves the right to change products and specifications without notice.the information does not convey any license under rights of eudyna devices inc. or others. ? 2004 eudyna devices usa inc. printed in u.s.a.
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